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                PMEG3020EH_EJ_4 ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 — 4 February 2010 4 of 9 NXP Semiconductors PMEG3020EH; PMEG3020EJ 30 V, 2 A ultra low VF MEGA Schottky barrier rectifiers 7. Characteristics [1] Pulse test: tp ≤ 300 μs; δ≤0.02. Table 8. Characteristics Tamb =25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage [1] IF = 1 mA - 125 160 mV IF = 10 mA - 185 220 mV IF = 100 mA - 255 290 mV IF = 500 mA - 330 380 mV IF = 1000 mA - 400 480 mV IF = 2000 mA - 510 620 mV IR reverse current VR =10V - 60 150 μA VR= 30 V - 400 1000 μA Cd diode capacitance VR =1V; f=1MHz - 6072pF (1) Tamb = 150 °C (2) Tamb = 125 °C (3) Tamb =85°C (4) Tamb =25°C (5) Tamb = ?40 °C (1) Tamb = 150 °C (2) Tamb = 125 °C (3) Tamb =85°C (4) Tamb =25°C (5) Tamb = ?40 °C Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Reverse current as a function of reverse voltage; typical values 006aaa293 10 1 103 102 104 IF (mA) 10?1 VF (V) 0 0.60.1 0.3 0.50.2 0.4 (1) (2) (3) (4) (5) 006aaa294 106 IR (μA) 105 10?2 10?1 1 10 102 103 104 VR (V) 035515 3010 20 25 (1) (3) (2) (4) (5) |